发明名称 |
Method for photoresist development with improved CD |
摘要 |
A method for developing a photo-exposed photoresist layer to improve a critical dimension uniformity (CDU) for a semiconductor device manufacturing process including providing a semiconductor process wafer having a process surface comprising a photoresist layer photo-exposed according to an exposure pattern; dispensing a predetermined amount of developer solution over a stationary semiconductor process wafer to form a film of developer solution covering the process surface; partially developing the exposed portions of the photoresist layer comprising maintaining the semiconductor process wafer in a stationary position for a predetermined time period; rotating the semiconductor process wafer for a predetermined period of time to remove a portion of the developer solution; and, repeating the steps of dispensing, partially developing, and rotating, for a predetermined number of repetition cycles to complete a photoresist development process.
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申请公布号 |
US6811955(B2) |
申请公布日期 |
2004.11.02 |
申请号 |
US20020235185 |
申请日期 |
2002.09.04 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
WU WEI-JEN;CHIU SUNG-CHENG;HUANG CHING-JIUNN;WU CHENG-MING |
分类号 |
G03F7/30;(IPC1-7):G03F7/26 |
主分类号 |
G03F7/30 |
代理机构 |
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地址 |
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