STRUCTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a ferroelectric capacitor device wherein a W plug is not oxidized even under an oxidation environment in an 1T1C ferroelectric memory and a ferroelectric layer is hardly reduced even in a hydrogen environment. SOLUTION: A TiAlN film subjected to plasma processing under an oxygen or nitrogen environment is formed on a W plug and used for an oxidation preventing film of the W plug. Further, IrOx is added to a ferroelectric capacitor lower conductive layer to attain further prevention of the W plug and the addition of IrOx acts like preventing film exfoliation. IrOx is added to a ferroelectric capacitor upper conductive layer to prevent film exfoliation of an upper conductive layer and also hydrogen damage of an inter-layer film. A TiAlN film subjected to plasma processing under an oxygen or nitrogen environment is used for a local interconnect to attain a wire structure for completely covering a ferroelectric capacitor part and an inter-layer film on the ferroelectric capacitor part, and further a capsule structure for covering Al2O3thereon, thereby furthermore preventing the hydrogen damage to the inter-layer film. Moreover, dehydration is applied to an ozone TEOS film of the interlayer insulation film to reduce water contents in the film. COPYRIGHT: (C)2005,JPO&NCIPI