发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device where the wasteful power loss caused by the margin part of the power voltage can be reduced considering the dispersion of a characteristic. SOLUTION: A voltage control unit 14 generates a voltage setting signal S14 setting a power voltage Vdd which is to be supplied to a target circuit 11 based on the delay time which a delay signal S13 of a replica circuit 13 has for a clock signal CLK. A maximum value of the power voltage Vdd which is set in the voltage setting signal S14 is limited to a maximum value Vmax of power voltage which is decided based on manufacture dispersion of the semiconductor device. Even if a value of power voltage which is set based on a delay signal S13 exceeds the maximum value Vmax since it is the margin part considering dispersion of the characteristic, setting voltage of the voltage setting signal S14 outputted to an external power source 2 is limited to the maximum value Vmax. Thus, wasteful power loss can be suppressed. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004303882(A) 申请公布日期 2004.10.28
申请号 JP20030093768 申请日期 2003.03.31
申请人 SONY CORP 发明人 NAKAI MASAKATSU
分类号 H01L27/04;G06F1/32;H01L21/822;H03K19/00;H05B41/16;(IPC1-7):H01L21/822 主分类号 H01L27/04
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