| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state image sensor exhibiting sufficient saturation output and sensitivity even when the pixel size is reduced and capable of transferring the signal charges at a high rate, and to provide its fabricating method. SOLUTION: Multiple light receiving sensor parts 2 constituting a pixel are arranged in matrix, each vertical charge transfer part 3 provided for each row of the light receiving sensor parts 2 is constituted of a sheet of vertical transfer electrode 4, an electrode 7 for reading the signal charges from the light receiving sensor part 2 is provided, independently from the vertical transfer electrode 4, at a part facing the light receiving sensor part 2 of each vertical charge transfer part 3 and connected electrically with each row of the light receiving sensor parts 2 thus constituting a solid state image sensor 1. The process for fabricating the solid state image sensor 1 comprises a step for removing the part of an insulation layer formed on a semiconductor substrate becoming the vertical charge transfer part, a step for forming a semiconductor region becoming the transfer region of the vertical charge transfer part 3 by implanting ions into the semiconductor substrate using the insulation layer as a mask, a step for forming the vertical charge transfer electrode 4 of the vertical charge transfer part 3 at the removed part of the insulation layer, and a step for removing the insulation layer. COPYRIGHT: (C)2005,JPO&NCIPI
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