发明名称 DEVICE AND METHOD FOR ETCHING
摘要 PROBLEM TO BE SOLVED: To effectively remove a silicon-containing DLC (diamond like carbon) film. SOLUTION: A plasma 20 is generated by supplying argon gas, hydrogen gas and oxygen gas to a plasma gun 18, and the oxygen ionized by the plasma 20 reacts with a carbon component and a hydrogen component in the silicon-containing DLC film formed on the surfaces of substrates to be treated 54, 54, etc. Thereby, the carbon component and the hydrogen component are removed as carbon gas and water. Meanwhile, the ionized oxygen reacts with a silicon component in the silicon-containing DLC film to generate silicon oxide on the surfaces of the plurality of the substrates to be treated 54. When the oxygen gas supply is withdrawn, the silicon oxide reacts with the ionized hydrogen gas and is removed as silane gas and water. Supplying and withdrawal of the oxygen gas is alternately performed. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004300496(A) 申请公布日期 2004.10.28
申请号 JP20030093719 申请日期 2003.03.31
申请人 SHINKO SEIKI CO LTD 发明人 TERAYAMA NOBUYUKI;KASHIWABARA AKITAKA;SHIMIZU NOBUYUKI
分类号 C23F4/00;(IPC1-7):C23F4/00 主分类号 C23F4/00
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