| 摘要 |
A magnetoresistive memory includes a control circuit with a first pole that, via a reading distributor, can be individually connected to first ends of bit lines by switching elements. The control circuit also has a second pole, which supplies power to an evaluator, and has a third pole that is connected to a reference voltage source. The readout circuit additionally includes a third voltage source having a voltage, which is approximately equal to the voltage of the first reading voltage source and which can be individually connected to second ends of the bit lines by means of switching elements. Finally, the readout circuit includes a fourth voltage source, which can be individually connected to second ends of the word lines by means of switching elements.
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