| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
There is provided a method of manufacturing a semiconductor device, including forming a structure including a first layer containing Si and a metal oxide layer in contact with the first layer, the metal oxide layer having a dielectric constant higher than that of silicon oxide, and heating the structure in an atmosphere containing He and/or Ne.
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| 申请公布号 |
US2004214400(A1) |
申请公布日期 |
2004.10.28 |
| 申请号 |
US20040846644 |
申请日期 |
2004.05.17 |
| 申请人 |
MURAOKA KOUICHI;KURIHARA KAZUAKI |
发明人 |
MURAOKA KOUICHI;KURIHARA KAZUAKI |
| 分类号 |
H01L21/28;H01L29/51;(IPC1-7):H01L21/336;H01L21/476;H01L21/31;H01L21/469;H01L21/320 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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