发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A semiconductor device containing a dielectric capacitor having an excellent step coverage for a device structure of high aspect ratio corresponding to high integration degree, as well as a manufacturing method therefor are provided. A dielectric capacitor of high integration degree is manufactured by forming a bottom electrode 46 and a top-electrode 48 comprising a homogeneous thin Ru film with 100% step coverage while putting a dielectric 47 therebetween on substrates 44, 45 having a three-dimensional structure with an aspect ratio of 3 or more by a MOCVD process using a cyclopentadienyl complex within a temperature range from 180° C. or higher to 250° C. or lower.
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申请公布号 |
US2004214392(A1) |
申请公布日期 |
2004.10.28 |
申请号 |
US20040852121 |
申请日期 |
2004.05.25 |
申请人 |
NABATAME TOSHIHIDE;SUZUKI TAKAAKI;FUJIWARA TETSUO;HIGASHIYAMA KAZUTOSHI |
发明人 |
NABATAME TOSHIHIDE;SUZUKI TAKAAKI;FUJIWARA TETSUO;HIGASHIYAMA KAZUTOSHI |
分类号 |
C23C16/18;C23C16/40;H01L21/02;(IPC1-7):H01L21/823 |
主分类号 |
C23C16/18 |
代理机构 |
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地址 |
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