| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment method for forming a fine hole(or groove) reaching the deep part of a silicon layer by a high etching rate. <P>SOLUTION: When CF<SB>4</SB>gas is not added to treatment gas (c), the amount of a deposition of deposit 310 at a mask opening is increased in the latter half of etching treatment when a hole is deep, and the aperture diameter Rc1 of the mask is made extremely narrow. When CF<SB>4</SB>gas is added to the treatment gas (b), the amount of deposition of the deposit 310 at the mask opening when all processes of etching treatment are completed is reduced. The aperture diameter Rb1 of the mask is made wider than the aperture diameter Rc1 of the mask when the CF<SB>4</SB>gas is not added to the treatment gas. Thus, it is possible to form a fine hole or a groove having a high aspect rate in the silicon layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
