| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile magnetic memory device having a structure which is hardly affected by a fixed external magnetic field. SOLUTION: The nonvolatile magnetic memory device 10 comprises a memory chip 11 equipped with a plurality of nonvolatile magnetic memory elements. The nonvolatile magnetic memory device 10 also comprises external magnetic field offsetting means 21A, 21B, and 21C for canceling out at least part of an external magnetic field. The external magnetic field offsetting means are equipped outside and/or inside the memory chip. COPYRIGHT: (C)2005,JPO&NCIPI |
