发明名称 |
SOLID STATE IMAGE PICKUP DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a solid state image pickup device in which noise is reduced and sensitivity is improved. SOLUTION: The solid state image pickup device is provided with a plurality of photosensitive cells and a driving means for driving the photosensitive cells. Each photosensitive cell comprises a photodiode 5 formed on the surface of a semiconductor substrate 9 so as to be exposed in order to accumulate signal charge obtained by photoelectrically converting incident light, a transfer transistor 6 for transferring the signal charge accumulated by the photodiode 5, a suspended diffusion layer 1 for temporarily accumulating the signal charge transferred by the transfer transistor 6, and an amplification transistor 2 for amplifying the signal charge temporarily accumulated in the suspended diffusion layer 1. Source/drain diffusion layers 3 formed in the amplification transistor 2 are covered with salicide layers 4 and the suspended diffusion layer 1 is formed on the surface of the semiconductor substrate 9 so as to be exposed. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2004304012(A) |
申请公布日期 |
2004.10.28 |
申请号 |
JP20030096245 |
申请日期 |
2003.03.31 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
UCHIDA MIKIYA;MATSUNAGA MASAYUKI;INAGAKI MAKOTO |
分类号 |
H01L27/146;H01L31/10;H04N5/335;H04N5/357;H04N5/369;H04N5/374;(IPC1-7):H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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