APPARATUS AND METHOD FOR HIGHLY CONTROLLED ELECTRODEPOSITION

摘要

An apparatus and method for highly controlled electrodeposition, particularly useful for electroplating submicron structures. Enhanced control of the process provides for a more uniform deposit thickness over the entire substrate, and permits reliable plating of submicron features. The apparatus includes a pressurized electrochemical cell (10) to improve plating efficiency and reduce defects, vertical laminar flow of the electrolyte solution to remove surface gases from the vertically arranged substrate, a rotating wafer chuck (12) to eliminate edge plating effects, and a variable aperture (18) to control the current distribution and ensure deposit uniformity across the entire substrate. Also a dynamic profile anode whose shape can be varied to optimize the current distribution to the substrate. The anode is advantageously able to use metallic ion sources and may be placed close to the cathode thus minimizing contamination of the substrate.