NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING MINIATURIZED CELLS AND ELECTRONIC DEVICE HAVING THE SAME

摘要

PURPOSE: A non-volatile semiconductor memory device having miniaturized cells and an electronic device having the same are provided to reduce influence of interference between adjacent cells according to reading conditions. CONSTITUTION: A non-volatile semiconductor memory device includes a memory cell array and a plurality of sense amplifier circuits. The memory cell array(1) is formed by arranging electrically rewritable floating gate type memory cells. The sense amplifier circuits(SA0-SAi-1) are configured to read data from the memory cell array. Each of the sense amplifier circuits is configured to sense cell data of a first memory cell selected from the memory cell array under a read condition determined in correspondence with cell data of a second memory cell. The second memory cell is adjacent to the first memory cell and is written after the first memory cell.