| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a cell structure of a DRAM for facilitating countermeasures to the fining and high integration of a design rule in recent years with the cells of the DRAM which are excellent in charge holding capability, and a method for manufacturing the semiconductor device. <P>SOLUTION: This semiconductor device comprises two trench capacitors 2a and 2b formed inside a semiconductor substrate 1, a first diffusion area 12 formed on those two trench capacitors 2a and 2b, a gate electrode 13 formed on a portion of the first diffusion area 12 and a second diffusion area 16 formed in the periphery of a gate electrode 13 on the surface of the semiconductor substrate 1. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
