发明名称 MEMORY CIRCUIT AND METHOD FOR OPERATING MEMORY CIRCUIT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for supplying a clock signal which is not affected by any temperature change or power supply voltage fluctuation in a circuit for performing access to a memory. <P>SOLUTION: This memory circuit is provided with a delay circuit for generating a delay clock signal by delaying a reference clock signal, a temperature detecting circuit and a voltage detecting circuit. The temperature detecting circuit detects the temperature of the periphery of the circuit, and the voltage detecting circuit detects the power supply voltage of the circuit, and the delay circuit decides the delay amount of the delay clock signal based on either the temperature data detected by the temperature detecting circuit or the voltage detected by the voltage detecting circuit. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004303163(A) 申请公布日期 2004.10.28
申请号 JP20030098175 申请日期 2003.04.01
申请人 NEC PLASMA DISPLAY CORP 发明人 MANABE HISASHI
分类号 G06F1/10;G11C7/04;G11C7/10;G11C7/22;G11C11/4076;G11C29/50;H03K5/13;(IPC1-7):G06F1/10 主分类号 G06F1/10
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