发明名称 GATE DRIVE CIRCUIT AND POWER CONTROL METHOD THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a gate drive circuit and a power control method therefor in a MOS gate drive power IC, for use as a power supply of an upper arm drive circuit for supplying a gate signal to the main IGBT 21 of the upper arm of an inverter, with a simple and stable power supply without need of preparing a special power supply. <P>SOLUTION: In a period of being unable to perform bootstrap charge (a period of an IGBT 21 of a lower arm being off, and a floating potential at a point A remaining in a high potential), a power supply capacitor 10 can be charged by repeated charge pump operations of charging an auxiliary capacitor 19 from a power supply 6, and discharging from the auxiliary capacitor 19 to power supply capacitor 10 by alternately driving a PMOS 17 and an NMOS 18. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004304527(A) 申请公布日期 2004.10.28
申请号 JP20030095346 申请日期 2003.03.31
申请人 HITACHI LTD 发明人 SUDA KOICHI
分类号 H02M1/08;H03K17/06;H03K17/687 主分类号 H02M1/08
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