发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which can use an existing platform in an integrated circuit part as it is and has a temperature sensor which can be manufactured without polluting its inside and its manufacturing device. SOLUTION: An integrated circuit part 2 is provided on the surface of a P-type silicon substrate PSub and a multilayer wiring layer M1 in a semiconductor integrated circuit device 1. A temperature sensor part 3 is provided and a sheet member 8 formed of vanadium oxide is provided on an upper layer of the multilayer wiring layer M1. The sheet member 8 and a resistor R are connected in series between a ground potential wiring GND and a power supply potential wiring Vcc, and an output terminal Vout1 is connected to the connection point between the two. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004304070(A) 申请公布日期 2004.10.28
申请号 JP20030097294 申请日期 2003.03.31
申请人 NEC ELECTRONICS CORP 发明人 OKUBO HIROAKI;NAKASHIBA YASUTAKA
分类号 H01L27/04;G01K7/01;H01L21/02;H01L21/822;H01L21/8234;H01L23/34;H01L27/06;H01L29/00;H01L29/93;H01L31/058;(IPC1-7):H01L21/822;H01L21/823 主分类号 H01L27/04
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