发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which can use an existing platform in an integrated circuit part as it is and has a temperature sensor which can be manufactured without polluting its inside and its manufacturing device. SOLUTION: An integrated circuit part 2 is provided on the surface of a P-type silicon substrate PSub and a multilayer wiring layer M1 in a semiconductor integrated circuit device 1. A temperature sensor part 3 is provided and a sheet member 8 formed of vanadium oxide is provided on an upper layer of the multilayer wiring layer M1. The sheet member 8 and a resistor R are connected in series between a ground potential wiring GND and a power supply potential wiring Vcc, and an output terminal Vout1 is connected to the connection point between the two. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2004304070(A) |
申请公布日期 |
2004.10.28 |
申请号 |
JP20030097294 |
申请日期 |
2003.03.31 |
申请人 |
NEC ELECTRONICS CORP |
发明人 |
OKUBO HIROAKI;NAKASHIBA YASUTAKA |
分类号 |
H01L27/04;G01K7/01;H01L21/02;H01L21/822;H01L21/8234;H01L23/34;H01L27/06;H01L29/00;H01L29/93;H01L31/058;(IPC1-7):H01L21/822;H01L21/823 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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