发明名称 |
Active hardmask for lithographic patterning |
摘要 |
In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.
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申请公布号 |
US2004214113(A1) |
申请公布日期 |
2004.10.28 |
申请号 |
US20030423466 |
申请日期 |
2003.04.24 |
申请人 |
GOLDSTEIN MICHAEL;CHANDHOK MANISH;PANNING ERIC;BRISTOL ROBERT;RICE BRYAN J. |
发明人 |
GOLDSTEIN MICHAEL;CHANDHOK MANISH;PANNING ERIC;BRISTOL ROBERT;RICE BRYAN J. |
分类号 |
G03F7/09;G03F7/11;G03F7/20;(IPC1-7):G03F7/20 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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