发明名称 Active hardmask for lithographic patterning
摘要 In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.
申请公布号 US2004214113(A1) 申请公布日期 2004.10.28
申请号 US20030423466 申请日期 2003.04.24
申请人 GOLDSTEIN MICHAEL;CHANDHOK MANISH;PANNING ERIC;BRISTOL ROBERT;RICE BRYAN J. 发明人 GOLDSTEIN MICHAEL;CHANDHOK MANISH;PANNING ERIC;BRISTOL ROBERT;RICE BRYAN J.
分类号 G03F7/09;G03F7/11;G03F7/20;(IPC1-7):G03F7/20 主分类号 G03F7/09
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