| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a magnetic memory in which writing free from crosstalk is enabled with a small current, and to provide its writing method therein. <P>SOLUTION: The magnetic memory prepares a spin polarization means (S) for performing spin polarization of electrons constituting a writing current, a hot electron preparation means (H) for turning the electrons constituting the writing current into hot electrons, and a magnetic layer (F) in which magnetization (M)is reversed by the writing current which is subjected to spin polarization by the spin polarization means and turned into hot electrons by the hot electron preparation means. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
