发明名称 HEATING APPARATUS AND METHOD, AND TREATMENT SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a heating apparatus which performs an aftertreatment such as an etching well by means of heating an object to be heated with a complicated temperature distribution pattern using a simpler structure. SOLUTION: The device comprises a infrared lamp 41 which irradiates a substrate for treatment W with a light beam to heat the substrate W and a mask M placed between the infrared lamp 41 and the substrate W, made of copper which reflects wavelength of irradiated light with apertures Ma of prescribed pattern. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004304147(A) 申请公布日期 2004.10.28
申请号 JP20030317262 申请日期 2003.09.09
申请人 TOSHIBA CORP 发明人 FUKUMIZU HIROYUKI;SUMINO TSUTOMU;SAITO SHUICHI
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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