发明名称 |
HEATING APPARATUS AND METHOD, AND TREATMENT SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a heating apparatus which performs an aftertreatment such as an etching well by means of heating an object to be heated with a complicated temperature distribution pattern using a simpler structure. SOLUTION: The device comprises a infrared lamp 41 which irradiates a substrate for treatment W with a light beam to heat the substrate W and a mask M placed between the infrared lamp 41 and the substrate W, made of copper which reflects wavelength of irradiated light with apertures Ma of prescribed pattern. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2004304147(A) |
申请公布日期 |
2004.10.28 |
申请号 |
JP20030317262 |
申请日期 |
2003.09.09 |
申请人 |
TOSHIBA CORP |
发明人 |
FUKUMIZU HIROYUKI;SUMINO TSUTOMU;SAITO SHUICHI |
分类号 |
H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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