| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS-type solid state imaging device which enables optimal light collection by using a single inner-layer lens and to provide a manufacturing method which allows the inner-layer lens to be formed with high accuracy. SOLUTION: This solid state imaging device has multiple pixels including light receptive portions, a wiring layer which is formed above the light receptive portions and includes multiple wires, and multiple lenses. At least one of the lenses is an inner-layer lens which consists of a first layer having recessed portions formed by etching and a second layer formed so that it fills the recessed portions. COPYRIGHT: (C)2005,JPO&NCIPI
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