| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic semiconductor element that can be driven stably under a low gate voltage. SOLUTION: This organic semiconductor element is composed at least of a substrate, an organic semiconductor, an insulator, and a conductor and has electrodes for impressing a bias voltage. The insulating section of the semiconductor element has the silsesquioxane skeleton expressed by the formula 1 (wherein, R1, R2, R3, and R4 denote substituted or nonsubstituted alkyl groups having 1-5 carbon atoms or substituted or nonsubstituted phenyl groups, both of which have the same functional group or different functional groups and random or block copolymerization forms, and m and n respectively denote integers of≥0 which are adjusted so that m+n may become an integer of≥1). COPYRIGHT: (C)2005,JPO&NCIPI
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