发明名称 DIELECTRIC CAPACITOR AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a dielectric capacitor protected by a thin protective film sufficiently functioning as a hydrogen degradation resistant protective film, and its manufacturing method. SOLUTION: The dielectric capacitor is constituted of a pair of electrodes and a dielectric positioned between them and is provided with the protective film formed of an oxide containing a metal and silicon. The capacitor is manufactured by a method in which a dielectric capacitor structure constituted of a pair of electrodes and the dielectric positioned between them is formed, the solution of the protective film material of the oxide containing the metal and the silicon is applied to it, heat treatment is executed and the protective film is formed. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004304015(A) 申请公布日期 2004.10.28
申请号 JP20030096265 申请日期 2003.03.31
申请人 FUJITSU LTD 发明人 ASO HIROYUKI
分类号 H01L27/04;H01L21/822;(IPC1-7):H01L21/822 主分类号 H01L27/04
代理机构 代理人
主权项
地址