| 摘要 |
PROBLEM TO BE SOLVED: To provide a system for controlling a body voltage of an SOI MISFET and obtaining a large on-current and a small off-current. SOLUTION: Two types of metals different in work functions or a part of a semiconductor is formed in a gate electrode. The two types of the metals or the semiconductor are brought into contact with one channel region in a semiconductor substrate through a gate insulating film. The two types of the metals or the semiconductors are electrically connected to it, and the body voltage of the SOI MISFET is controlled by a gate voltage. Thus, a high on-current and a low off-current can be obtained. Then, the gate electrode is brought into contact with a body through the insulating film. Thus, a current flowing in a source/drain from the gate through the body can be suppressed. Thus, even a high-power voltage of not less than 0.6V can be used. COPYRIGHT: (C)2005,JPO&NCIPI
|
