发明名称 CHARGE TRANSFER DEVICE AND SOLID STATE IMAGING DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress the occurrence of longitudinal lines due to untransferred remainders of transferred charges caused by a potential barrier, potential fluctuation, etc., existing in probability in the transfer channels of vertical charge transfer devices contained in charge discharging circuits. SOLUTION: A charge transfer device comprises the vertical charge transfer devices which transfer signal charges, a plurality of charge discharging circuits which are formed adjacently to the vertical charge transfer devices and selectively discharge the signal charges transferred by means of at least one sides of their adjacent vertical charge transfer devices, and an output circuit which outputs the signal charges transferred by means of the vertical charge transfer devices to the outside. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004303781(A) 申请公布日期 2004.10.28
申请号 JP20030091783 申请日期 2003.03.28
申请人 FUJI FILM MICRODEVICES CO LTD;FUJI PHOTO FILM CO LTD 发明人 YAMADA TETSUO
分类号 H01L27/148;H04N5/335;H04N5/357;H04N5/369;H04N5/372;(IPC1-7):H01L27/148 主分类号 H01L27/148
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