| 摘要 |
On a substrate of a GaN FET, an undoped AlN layer, a GaN delta doped layer, an undoped GaN layer, and an undoped Al0.2Ga0.8N layer are formed in sequence. Arranged on the undoped Al0.2Ga0.8N layer are a Ti/Al/Pt/Au source ohmic electrode, a Pt/Au gate Schottky electrode, and a Ti/Al/Pt/Au drain ohmic electrode. Parallel conduction and gate leak are reduced or eliminated by the GaN delta doped layer.
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