发明名称 METHOD OF ETCHING A MAGNETIC MATERIAL AND FOR FABRICATING A MRAM DEVICE
摘要 A method of etching a magnetic material (e.g., nickel-iron alloy (NiFe), cobalt-iron alloy (CoFe), and the like) using a gas mixture comprising a hydrogen halide gas and a fluorocarbon-containing gas is disclosed. The method provides high etch selectivity for the magnetic materials over non-magnetic dielectric materials, such as aluminum oxide (Al2O3) and the like, as well as to photoresist.
申请公布号 WO03085172(A3) 申请公布日期 2004.10.28
申请号 WO2003US09940 申请日期 2003.03.31
申请人 APPLIED MATERIALS, INC. 发明人 YING, CHENTSAU;CHEN, XIAOYI;JAIN, MOHIT;KUMAR, AJAY
分类号 C23F4/00;G11B5/64;G11B5/855;H01F41/30 主分类号 C23F4/00
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