发明名称 |
METHOD OF ETCHING A MAGNETIC MATERIAL AND FOR FABRICATING A MRAM DEVICE |
摘要 |
A method of etching a magnetic material (e.g., nickel-iron alloy (NiFe), cobalt-iron alloy (CoFe), and the like) using a gas mixture comprising a hydrogen halide gas and a fluorocarbon-containing gas is disclosed. The method provides high etch selectivity for the magnetic materials over non-magnetic dielectric materials, such as aluminum oxide (Al2O3) and the like, as well as to photoresist. |
申请公布号 |
WO03085172(A3) |
申请公布日期 |
2004.10.28 |
申请号 |
WO2003US09940 |
申请日期 |
2003.03.31 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YING, CHENTSAU;CHEN, XIAOYI;JAIN, MOHIT;KUMAR, AJAY |
分类号 |
C23F4/00;G11B5/64;G11B5/855;H01F41/30 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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