发明名称 |
Magneto-resistive element |
摘要 |
The present invention provides a vertical current-type magneto-resistive element. The element includes an intermediate layer and a pair of magnetic layers sandwiching the intermediate layer, and at least one of a free magnetic layer and a pinned magnetic layer is a multilayer film including at least one non-magnetic layer and magnetic layers sandwiching the non-magnetic layer. The element area defined by the area of the intermediate layer through which current flows perpendicular to the film is not larger than 1000 mum<2>.
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申请公布号 |
US2004213071(A1) |
申请公布日期 |
2004.10.28 |
申请号 |
US20040848742 |
申请日期 |
2004.05.17 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HIRAMOTO MASAYOSHI;MATUKAWA NOZOMU;ODAGAWA AKIHIRO;IIJIMA KENJI;SAKAKIMA HIROSHI |
分类号 |
G01R33/09;G11B5/39;G11C8/02;H01F10/14;H01F10/16;H01F10/32;H01F41/18;H01F41/30;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;H01L43/12;(IPC1-7):G11C8/02 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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