发明名称 Method of manufacturing semiconductor device, flexible substrate, and semiconductor device
摘要 A semiconductor chip 6 is mounted on a flexible substrate 1 wherein internal connecting electrodes 4 to be connected to protruding electrodes 7 on an element surface of the semiconductor chip 6 and wires 3 for connecting the internal connecting electrodes 4 and the external connecting electrodes to be connected to external devices are provided on a surface of an insulating film 2. The internal connecting electrodes 4, the wires 3 and the surface of the insulating film 2 are coated with a protective film 5. The protruding electrodes 7 and the internal connecting electrodes 4 are connected by arranging the element surface of the semiconductor chip 6 to face the flexible substrate 1 and causing the protruding electrodes 7 on the element surface to pierce the protective film 5. This semiconductor device manufacturing method makes it possible to prevent ion migration and reduce occurrence of short circuit between wires.
申请公布号 US2004214375(A1) 申请公布日期 2004.10.28
申请号 US20040808398 申请日期 2004.03.25
申请人 SHARP KABUSHIKI KAISHA 发明人 NAITOH KATSUYUKI
分类号 G02F1/1345;H01L21/44;H01L21/58;H01L21/60;H01L23/12;H01L23/48;H01L23/498;(IPC1-7):H01L21/44 主分类号 G02F1/1345
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