| 摘要 |
<p>A nonvolatile semiconductor storage device characterized by comprising sectors each including a memory cell array, word line drivers for driving word lines disposed in each sector, sector switches, commonly connected to word line drivers in each sector, adapted to supply a negative voltage to be applied to word lines when data in a selected sector is erased, including only a transistor directly connected to the output signal line for supplying a negative voltage to word drivers, and provided one in each sector, a decoding circuit for controlling sector switches, adapted to allow the sector switch in a selected sector to output a negative voltage and allow the sector switch in a non-selected sector to output a voltage different from the negative voltage, and shared by one or more sectors.</p> |
