| 摘要 |
PROBLEM TO BE SOLVED: To provide an etchant which can etch hafnium oxide for use in an insulating film or the like of a semiconductor device without damaging the semiconductor device, and to provide an etching method using the etchant. SOLUTION: The hafnium oxide etchant contains ammonium fluoride, fluorideses like the fourth class of ammonium fluorinated, hydrogen peroxide and solvent of these. Water and a water-soluble organic solvent, etc. are usable for the solvent. Hafnium oxide can be etched suitably in a temperature range of 10-100°C. COPYRIGHT: (C)2005,JPO&NCIPI
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