| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile magnetic memory device having a structure capable of reliably writing data in a nonvolatile magnetic memory (MRAM) selected to write data therein even with low electric power consumption irrespective of the intensity and direction of an external magnetic field. SOLUTION: The nonvolatile magnetic memory device 10 includes a memory chip 20 having a plurality of nonvolatile magnetic memories 21 and external magnetic field detection means 40. Data is rewritten into the nonvolatile magnetic memory 21 when an external magnetic field of a predetermined intensity value or more is detected by the external magnetic field detection means 40 upon data writing into the nonvolatile magnetic memory 21 or after the data writing. COPYRIGHT: (C)2005,JPO&NCIPI
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