发明名称 SEMICONDUCTOR MEMORY DEVICE, ITS RELIEVING METHOD , AND TEST METHOD
摘要 PROBLEM TO BE SOLVED: To enable relieving a resistive defective cell without providing a spare cell as the most main feature. SOLUTION: For example, in a semiconductor memory device constituted so that such operation can be performed that sense amplifiers of (m) (m=1, 2, ..., n) pieces out of sense amplifiers of (n) pieces connected to the same data input/output line are accessed time sequentially and successively without specification from the outside of the device, the device is provided with a selecting circuit selecting in order sense amplifiers of (m) pieces out of sense amplifiers of (n) pieces and a switching circuit switching order of selection of the amplifiers of (m) pieces by this selecting circuit. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004303343(A) 申请公布日期 2004.10.28
申请号 JP20030095401 申请日期 2003.03.31
申请人 TOSHIBA CORP 发明人 FUKUDA MAKOTO
分类号 G11C29/04;G11C7/10;G11C11/401;G11C11/407;G11C11/4096;G11C29/12;(IPC1-7):G11C29/00 主分类号 G11C29/04
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