发明名称 |
Fabrication method and substrate structure of polysilicon thin-film transistor |
摘要 |
A fabrication method and substrate structure of polysilicon thin-film transistors uses a substrate structure that retards the temperature decreasing during annealing and crystallizing of the amorphous silicon so that the melted silicon has enough time to transform into larger polysilicon crystals with more uniform dimensions and a lower surface roughness.
|
申请公布号 |
US2004214011(A1) |
申请公布日期 |
2004.10.28 |
申请号 |
US20030419775 |
申请日期 |
2003.04.22 |
申请人 |
CHANG SHIH-CHANG;TSAI YAW-MING |
发明人 |
CHANG SHIH-CHANG;TSAI YAW-MING |
分类号 |
C03C17/34;H01L21/20;H01L21/268;H01L21/324;H01L21/336;H01L29/786;(IPC1-7):B32B9/00 |
主分类号 |
C03C17/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|