INTEGRATED CONTENT ADDRESSABLE MEMORY ARCHITECTURE

摘要

A novel ten-transistor (10-T) content addressable memory (CAM) cell and an integrated CAM architecture. A six-transistor (6-T) static random access memory (SRAM) cell and a four-transistor (4-T) comparator module of the 10-T CAM cell are respectively coupled to different bit lines for preventing any disturbance at a match line associated with the 10-T CAM. Each row of the integrated CAM architecture includes a valid bit cell combined with a protect bit cell and at least a mask cell with global resetting function to sufficiently ensure the correction and flexibility during comparing operations.