发明名称 Semiconductor apparatus and production method thereof
摘要 A semiconductor apparatus includes (i) a semiconductor substrate, (ii) a field oxide film, formed in a surface of the semiconductor substrate, having an aperture section, (iii) a electrode pad formed on the field oxide film, and (iv) a penetration electrode electrically connected to the electrode pad via the aperture section of the field oxide film and a hole formed in the semiconductor substrate. The hole is formed in the aperture section of the field oxide film, when perpendicularly viewing the semiconductor substrate.
申请公布号 US2004212086(A1) 申请公布日期 2004.10.28
申请号 US20040828475 申请日期 2004.04.21
申请人 SHARP KABUSHIKI KAISHA 发明人 DOTTA YOSHIHISA;KIMURA TOSHIO;KURIMOTO HIDEYUKI
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L23/31;H01L23/48;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L23/48 主分类号 H01L23/52
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