An improved chemical vapor deposition system including a lid having (110) a channel (120) configured for delivering reactive cleaning gas to the interior of the vapor deposition system (100). The lid (110) including a cleaning gas distribution channel (120) fluidly connected to a plurality of cleaning gas injection ports (130). The lid (110) geometry is configured to generate desirable concentration gradients of reactive cleaning gas to the interior of a vapor deposition chamber (100). In some embodiments, the concentration gradient is selected to compensate for the temperature dependence of cleaning reactions. Methods of using the disclose system are disclosed.
申请公布号
WO2004032200(A3)
申请公布日期
2004.10.28
申请号
WO2003US31495
申请日期
2003.10.02
申请人
GENUS, INC.;KIM, GI-YOUL;MOORE, MARBERT, G. III;JANSZ, ADRIAN;FOOTE, DAVID;HENDRICKSON, RICHARD;DOERING, KEN
发明人
KIM, GI-YOUL;MOORE, MARBERT, G. III;JANSZ, ADRIAN;FOOTE, DAVID;HENDRICKSON, RICHARD;DOERING, KEN