METHOD FOR FABRICATING PIN SEMICONDUCTOR DETECTOR ON THE LOW RESISTIVITY SILICON SUBSTRATE USING PARAMETERS OBTAINED THROUGH SIMULATION

摘要

PURPOSE: A method for fabricating a PIN semiconductor detector on a low resistivity silicon substrate is provided to improve performance of the low resistivity silicon substrate by using parameters obtained through a simulation. CONSTITUTION: Experimentation values of a doped density of a p+ layer of a PIN semiconductor detector, re-distribution of impurities through a heating treatment, and a guard-ring effect of a cutting surface are detected through a simulation. Optimal parameters and the structure of a PIN semiconductor detector are determined according to the experimental values. The PIN semiconductor detector is fabricated by using the optical parameters. A DAVINCH program is used for the simulation. A TSUPREM-IV program for analyzing parameters obtained through a semiconductor fabricating process is used in order to determine the optimal parameters from the experimental values.