| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of achieving a low profile and the high performance of the semiconductor device as a whole, and to provide the semiconductor device. SOLUTION: A ferroelectric capacitor C is formed by sequentially layering a lower electrode layer 6A and a ferroelectric layer 6B which are made of Pt, and an upper electrode layer 6C made of Pt on a first interlayer insulating layer 5. Thereafter, a second interlayer insulating layer 8 and an adhesive layer 9 made of an insulating material or a high resistance material are sequentially formed to the entire upper face of the first interlayer insulating layer 5. Then a first via-hole V1 is formed to the second interlayer insulating layer 8 and the insulating adhesive layer 9, and thereafter a capacitor wire layer 10 made of Pt is formed in the first via-hole V1 and to part of the upper face of the second inter-layer insulating layer 8 above the ferroelectric capacitor C. Then a first contact hole H1 and a second via-hole V2 are formed in an uppermost layer interlayer insulating layer 11 formed to the entire upper face of the second interlayer insulating layer 8, and thereafter a wire layer 12 is formed. COPYRIGHT: (C)2005,JPO&NCIPI
|
