| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that it is difficult to easily realize the high dielectric strength of a diode. SOLUTION: A diode element of an inversely beveled structure is formed by providing a sloping side surface 7 to a semiconductor base material 4 comprising a p<SP>+</SP>-type semiconductor region 1, an n<SP>-</SP>-type semiconductor region 2, and an n<SP>+</SP>-type semiconductor region 3. An insulating protection resin film 10 is provided to the sloping side surface 7 of the semiconductor base material 4. A field plate 11 is also provided over this protection resin film 10. The field plate 11 is connected to an anode electrode 5. A comparatively thin first part 17 and a comparatively thick second part 18 are provided to the protection resin film 10. The first part 17 is allocated over the side surface of the n<SP>-</SP>-type semiconductor region 2. The second part 18 is allocated over the side surface of the n<SP>+</SP>-type semiconductor region 3. COPYRIGHT: (C)2005,JPO&NCIPI
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