| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a various forms of ZnO-based semiconductor devices for providing a ZnO-based semiconductor device equipped with stabilized P-type ZnO layer, by manufacturing the stabilized P-type ZnO layer capable of being doped with nitrogen atoms at a high concentration inside a ZnO thin film and capable of combining with a N-type ZnO layer that can be easily made or combined with a P-type layer or a N-type layer, having different compositions. <P>SOLUTION: In a ZnO semiconductor device of this invention having one layer or more of N-type layers and P-type layers, at least one layer of the P-type layers is formed by a Zn polarity ZnO semiconductor thin film that is doped with nitrogen atoms, and the Zn polarity ZnO semiconductor thin film has a thin-film growing direction which is set as a Zn polarity direction [0001]. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
