| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly oriented diamond film which is used in electronic members such as a high performance ultraviolet sensor, a radiation sensor or a heat sink, especially, in electronic members utilizing the properties in the thickness direction (vertical direction) of the diamond; and to provide a method for manufacturing the same. SOLUTION: Diamond grains 3 which are oriented in a specified direction with respect to a silicon substrate 1 are formed by impressing a bias voltage to the substrate 1 for a predetermined time. The highly oriented diamond film in which the crystal orientation exists is formed by a chemical vapor deposition method adopting a deposition condition such that the (001) plane of the diamond crystal grains is selectively left to the substrate 1. The deposition process of the highly oriented diamond film comprises a highly oriented diamond film synthesizing process including at least two stage (001) plane selective deposition conditions, and the film deposition speed in a first stage diamond film 4 synthesizing process is≤1/10 of the film deposition speed in the second stage diamond film 5 synthesizing process, performed after the first stage. COPYRIGHT: (C)2005,JPO&NCIPI
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