发明名称 |
Ferroelectric memory device and method for manufacturing the same |
摘要 |
The present invention provides a ferroelectric memory device and a manufacturing method forming the same capable of preventing characteristic deterioration of a ferroelectric layer due to an plasma. The ferroelectric memory device divided into a first area including a plurality of ferroelectric capacitor and a second area not including the ferroelectric capacitor, includes a semiconductor substrate; a first insulating layer formed on the semiconductor substrate; and a bottom electrode of the ferroelectric capacitor formed in the first insulating layer, wherein a top surface of the bottom electrode is planarized with the first insulating layer; a ferroelectric layer of the ferroelectric capacitor covering not only the bottom electrode but also all the first area; and a top electrode of the ferroelectric capacitor formed on the ferroelectric layer and overlapped with the bottom electrode.
|
申请公布号 |
US2004211997(A1) |
申请公布日期 |
2004.10.28 |
申请号 |
US20040848113 |
申请日期 |
2004.05.19 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
OH SANG-HYUN;SUH CHUNG-WON;SEONG JIN-YONG |
分类号 |
G11C11/22;H01L21/8246;H01L27/11;(IPC1-7):H01L29/94;H01L21/824 |
主分类号 |
G11C11/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|