| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with improved electrostatic breakdown resistance so that the ESD surge current is not concentrated to an output transistor, which is inferior in the ESD resistance, even when a breakdown of the output transistor occurs earlier than the breakdown of a protective transistor due to the difference of the transistor structure of the output transistor and the protective transistor. SOLUTION: In an output circuit where a drain of a first conductivity type NMOS output transistor 11 is connected to an output electrode and a source is grounded, the drain and the source are connected respectively the drain and the source of the NMOS output transistor 11 and an NMOS protective transistor 10, where a gate is directly connected to a P well 22 as a second conductivity type layer at the bottom of a gate electrode of the NMOS output transistor 11, is formed. Consequently, the effect of the protective transistor can be improved without an electrostatic surge concentrating on the NMOS transistor output 11. COPYRIGHT: (C)2005,JPO&NCIPI
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