| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the thickness of a offset spacer film or a gate side wall film can be changed in an nMOSFET and a pMOSFET, and optimization of the MOSFET is easy. SOLUTION: The semiconductor device is constituted of an n-type well region 12 and a p-type well region 13 which are formed on a p-type semiconductor substrate 11, a gate electrode 20A formed on the p-type well region 12, a gate electrode 20B formed on the p-type well region 13, an offset spacer 21A formed on the side surface of the gate electrode 20A, an offset spacer 21B which is formed on the side surface of the gate electrode 20B and has film thickness different from the offset spacer 21A, a gate sidewall film 22A formed on the offset spacer 21A of the gate electrode 20A side surface, and a gate sidewall film 22B which is formed on the offset spacer 21B of the gate electrode 20B side surface and has film thickness different from the gate sidewall film 22A. COPYRIGHT: (C)2005,JPO&NCIPI
|
