发明名称 |
Metal oxide semiconductor field effect transistors (MOSFETs) including recessed channel regions and methods of fabricating the same |
摘要 |
Unit cells of metal oxide semiconductor (MOS) transistors are provided having an integrated circuit substrate and a MOS transistor on the integrated circuit substrate. The MOS transistor includes a source region, a drain region and a gate. The gate is between the source region and the drain region. A channel region is provided between the source and drain regions. The channel region has a recessed region that is lower than bottom surfaces of the source and drain regions. Related methods of fabricating transistors are also provided.
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申请公布号 |
US2004212024(A1) |
申请公布日期 |
2004.10.28 |
申请号 |
US20040795653 |
申请日期 |
2004.03.08 |
申请人 |
OH CHANG-WOO;PARK DONG-GUN;LEE SUNG-YOUNG;LEE CHANG-SUB;CHOE JEONG-DONG |
发明人 |
OH CHANG-WOO;PARK DONG-GUN;LEE SUNG-YOUNG;LEE CHANG-SUB;CHOE JEONG-DONG |
分类号 |
H01L29/786;H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01L31/062 |
主分类号 |
H01L29/786 |
代理机构 |
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地址 |
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