发明名称 |
NITRIDE SEMICONDUCTOR LAYER STRUCTURE AND A NITRIDE SEMICONDUCTOR LASER INCORPORATING A PORTION OF SAME |
摘要 |
The nitride semiconductor layer structure comprises a buffer layer and a composite layer on the buffer layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. The composite layer is a layer of a single-crystal nitride semiconductor material that includes AlN. The composite layer includes a first sub-layer adjacent the buffer layer and a second sub-layer over the first sub-layer. The single-crystal nitride semiconductor material of the composite layer has a first AlN molar fraction in the first sub-layer and has a second AlN molar fraction in the second sub-layer. The second AlN molar fraction is greater than the first AlN molar fraction. The nitride semiconductor laser comprises a portion of the above-described nitride semiconductor layer structure, and additionally comprises an optical waveguide layer over the composite layer and an active layer over the optical waveguide layer.
|
申请公布号 |
US2004213309(A9) |
申请公布日期 |
2004.10.28 |
申请号 |
US20010040328 |
申请日期 |
2001.12.19 |
申请人 |
AMANO HIROSHI;AKASAKI ISAMU;KANEKO YAWARA;YAMADA NORIHIDE;TAKEUCHI TETSUYA;WATANABE SATOSHI |
发明人 |
AMANO HIROSHI;AKASAKI ISAMU;KANEKO YAWARA;YAMADA NORIHIDE;TAKEUCHI TETSUYA;WATANABE SATOSHI |
分类号 |
H01S5/20;H01S5/32;H01S5/323;H01S5/343;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|