BETA IRON SILICIDE AND ITS THIN FILM, METHOD FOR MANUFACTURING THE THIN FILM AND LIGHT EMITTING/LIGHT RECEIVING ELEMENT USING THE THIN FILM

摘要

PROBLEM TO BE SOLVED: To improve the light emitting efficiency of a β iron silicide thin film by manufacturing the β iron silicide thin film which can emit light by supplying current.

SOLUTION: When the β iron silicide thin film is manufactured by using a suitable thin film forming technique, 1-5 mol% of carbon is preferably added as a dopant to the β iron silicide and a film is formed. When the β iron silicide thin film after the carbon is added is annealed in an inert atmosphere at 800-940°C, crystallization of the β iron silicide is expedited, and the β iron silicide is changed to efficiently emit a light. A lattice deformation arises into the crystal of the β iron silicide similarly to the external operation of a strain to the crystal of the β iron silicide. The β iron silicide can be changed from an indirect transition type semiconductor to a direct transition type semiconductor. The β iron silicide to which the carbon is added exhibits the characteristics of the direct transition type semiconductor. Accordingly, an efficient light emission can be performed by the injection of a charge.

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