| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a program ROM, where reliability is improved in data writing, and to provide a method for determining the program ROM. <P>SOLUTION: In a first memory cell P1 composed of a first transistor MT1 having a first floating gate and a transistor enabling the system to access and control write and read operation to the first transistor, data are written to the first floating gate of the first transistor. In a second memory cell P2 composed of a second transistor MT2 having a second floating gate and a transistor for enabling the system to access and control write and read operation to the second transistor, data in an inverted relationship with data in the first floating gate are written to the second floating gate of the second transistor. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
