发明名称 SEMICONDUCTOR WAFER AND MANUFACTURING METHOD OF PIEZOELECTRIC OSCILLATOR USING THE WAFER
摘要 PROBLEM TO BE SOLVED: To improve the substrate structure of a temperature compensated piezoelectric oscillator particularly for realizing miniaturization and its manufacturing method. SOLUTION: In the manufacturing method of the piezoelectric oscillator composed of a semiconductor wafer, a piezoelectric vibrator and a lid forming a temperature compensation circuit, the substrate with a desired temperature compensation control terminal disposed in the terminal portion of the semiconductor wafer is used and after desired control is completed and the piezoelectric oscillator is configured, the semiconductor wafer portion forming the control terminal portion is cut off. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004304447(A) 申请公布日期 2004.10.28
申请号 JP20030093907 申请日期 2003.03.31
申请人 KYOCERA KINSEKI CORP 发明人 MIYANAGA MASAYASU
分类号 H03B5/32;H03H3/04;H03H9/02;(IPC1-7):H03B5/32 主分类号 H03B5/32
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